1 Preface
2 Scope and Methodology
2.1 Objectives of the Study
2.2 Stakeholders
2.3 Data Sources
2.3.1 Primary Sources
2.3.2 Secondary Sources
2.4 Market Estimation
2.4.1 Bottom-Up Approach
2.4.2 Top-Down Approach
2.5 Forecasting Methodology
3 Executive Summary
4 Introduction
4.1 Overview
4.2 Key Industry Trends
5 Global Magneto Resistive RAM (MRAM) Market
5.1 Market Overview
5.2 Market Performance
5.3 Impact of COVID-19
5.4 Market Forecast
6 Market Breakup by Type
6.1 Toggle MRAM
6.1.1 Market Trends
6.1.2 Market Forecast
6.2 Spin-Transfer Torque MRAM (STT-MRAM)
6.2.1 Market Trends
6.2.2 Market Forecast
7 Market Breakup by Offering
7.1 Stand-alone
7.1.1 Market Trends
7.1.2 Market Forecast
7.2 Embedded
7.2.1 Market Trends
7.2.2 Market Forecast
8 Market Breakup by Application
8.1 Consumer Electronics
8.1.1 Market Trends
8.1.2 Market Forecast
8.2 Robotics
8.2.1 Market Trends
8.2.2 Market Forecast
8.3 Enterprise Storage
8.3.1 Market Trends
8.3.2 Market Forecast
8.4 Automotive
8.4.1 Market Trends
8.4.2 Market Forecast
8.5 Aerospace and Defense
8.5.1 Market Trends
8.5.2 Market Forecast
8.6 Others
8.6.1 Market Trends
8.6.2 Market Forecast
9 Market Breakup by Region
9.1 North America
9.1.1 United States
9.1.1.1 Market Trends
9.1.1.2 Market Forecast
9.1.2 Canada
9.1.2.1 Market Trends
9.1.2.2 Market Forecast
9.2 Asia-Pacific
9.2.1 China
9.2.1.1 Market Trends
9.2.1.2 Market Forecast
9.2.2 Japan
9.2.2.1 Market Trends
9.2.2.2 Market Forecast
9.2.3 India
9.2.3.1 Market Trends
9.2.3.2 Market Forecast
9.2.4 South Korea
9.2.4.1 Market Trends
9.2.4.2 Market Forecast
9.2.5 Australia
9.2.5.1 Market Trends
9.2.5.2 Market Forecast
9.2.6 Indonesia
9.2.6.1 Market Trends
9.2.6.2 Market Forecast
9.2.7 Others
9.2.7.1 Market Trends
9.2.7.2 Market Forecast
9.3 Europe
9.3.1 Germany
9.3.1.1 Market Trends
9.3.1.2 Market Forecast
9.3.2 France
9.3.2.1 Market Trends
9.3.2.2 Market Forecast
9.3.3 United Kingdom
9.3.3.1 Market Trends
9.3.3.2 Market Forecast
9.3.4 Italy
9.3.4.1 Market Trends
9.3.4.2 Market Forecast
9.3.5 Spain
9.3.5.1 Market Trends
9.3.5.2 Market Forecast
9.3.6 Russia
9.3.6.1 Market Trends
9.3.6.2 Market Forecast
9.3.7 Others
9.3.7.1 Market Trends
9.3.7.2 Market Forecast
9.4 Latin America
9.4.1 Brazil
9.4.1.1 Market Trends
9.4.1.2 Market Forecast
9.4.2 Mexico
9.4.2.1 Market Trends
9.4.2.2 Market Forecast
9.4.3 Others
9.4.3.1 Market Trends
9.4.3.2 Market Forecast
9.5 Middle East and Africa
9.5.1 Market Trends
9.5.2 Market Breakup by Country
9.5.3 Market Forecast
10 SWOT Analysis
10.1 Overview
10.2 Strengths
10.3 Weaknesses
10.4 Opportunities
10.5 Threats
11 Value Chain Analysis
12 Porters Five Forces Analysis
12.1 Overview
12.2 Bargaining Power of Buyers
12.3 Bargaining Power of Suppliers
12.4 Degree of Competition
12.5 Threat of New Entrants
12.6 Threat of Substitutes
13 Price Analysis
14 Competitive Landscape
14.1 Market Structure
14.2 Key Players
14.3 Profiles of Key Players
14.3.1 Avalanche Technology Inc.
14.3.1.1 Company Overview
14.3.1.2 Product Portfolio
14.3.2 Crocus Nano Electronics LLC
14.3.2.1 Company Overview
14.3.2.2 Product Portfolio
14.3.3 Everspin Technologies Inc.
14.3.3.1 Company Overview
14.3.3.2 Product Portfolio
14.3.3.3 Financials
14.3.4 Honeywell International Inc.
14.3.4.1 Company Overview
14.3.4.2 Product Portfolio
14.3.4.3 Financials
14.3.4.4 SWOT Analysis
14.3.5 Infineon Technologies AG
14.3.5.1 Company Overview
14.3.5.2 Product Portfolio
14.3.5.3 Financials
14.3.5.4 SWOT Analysis
14.3.6 Intel Corporation
14.3.6.1 Company Overview
14.3.6.2 Product Portfolio
14.3.6.3 Financials
14.3.6.4 SWOT Analysis
14.3.7 NVE Corporation
14.3.7.1 Company Overview
14.3.7.2 Product Portfolio
14.3.7.3 Financials
14.3.8 Qualcomm Incorporated
14.3.8.1 Company Overview
14.3.8.2 Product Portfolio
14.3.8.3 Financials
14.3.8.4 SWOT Analysis
14.3.9 Samsung Electronics Co. Ltd.
14.3.9.1 Company Overview
14.3.9.2 Product Portfolio
14.3.9.3 Financials
14.3.9.4 SWOT Analysis
14.3.10 Spin Memory Inc.
14.3.10.1 Company Overview
14.3.10.2 Product Portfolio
14.3.11 Toshiba Corporation
14.3.11.1 Company Overview
14.3.11.2 Product Portfolio
14.3.11.3 Financials
14.3.11.4 SWOT Analysis
14.3.12 Tower Semiconductor Ltd.
14.3.12.1 Company Overview
14.3.12.2 Product Portfolio
14.3.12.3 Financials
世界の磁気抵抗メモリ（MRAM）市場予測2022年-2028年 |
| 【英語タイトル】Magneto Resistive RAM (MRAM) Market: Global Industry Trends, Share, Size, Growth, Opportunity and Forecast 2023-2028 | |
 | ・商品コード：IMARC23FE0061 ・発行会社（調査会社）：IMARC ・発行日：2023年2月1日 ・ページ数：143 ・レポート言語：英語 ・レポート形式：PDF ・納品方法：Eメール ・調査対象地域：グローバル ・産業分野：電子 |
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| IMARC社は、2022年427.1百万ドルであった世界の磁気抵抗メモリ（MRAM）市場規模が2028年には4,525百万ドルに達し、予測期間中、年平均44.5％成長すると予測しています。当調査資料では、磁気抵抗メモリ（MRAM）の世界市場を調査・分析し、序論、範囲・調査手法、エグゼクティブサマリー、イントロダクション、種類別（トグルMRAM、STT-MRAM）分析、提供別（スタンドアロン型、組込型）分析、用途別（家電、ロボット、企業用ストレージ、自動車、その他）分析、地域別（北米、アジア太平洋、ヨーロッパ、中南米、中東/アフリカ）分析、SWOT分析、バリューチェーン分析、ファイブフォース分析、価格分析、競争状況などの項目を掲載しています。なお、当市場の主要企業には、Avalanche Technology Inc.、Crocus Nano Electronics LLC、Everspin Technologies Inc.、Honeywell International Inc.、Infineon Technologies AG、Intel Corporation、NVE Corporation、Qualcomm Incorporated、Samsung Electronics Co. Ltd.、Spin Memory Inc.、Toshiba Corporation、Tower Semiconductor Ltd.などが含まれています。 ・序論 ・範囲・調査手法 ・エグゼクティブサマリー ・イントロダクション ・世界の磁気抵抗メモリ（MRAM）市場規模：種類別 - トグルMRAMの市場規模 - STT-MRAMの市場規模 ・世界の磁気抵抗メモリ（MRAM）市場規模：提供別 - スタンドアロン型磁気抵抗メモリの市場規模 - 組込型磁気抵抗メモリの市場規模 ・世界の磁気抵抗メモリ（MRAM）市場規模：用途別 - 家電における市場規模 - ロボットにおける市場規模 - 企業用ストレージにおける市場規模 - 自動車における市場規模 - その他用途における市場規模 ・世界の磁気抵抗メモリ（MRAM）市場規模：地域別 - 北米の磁気抵抗メモリ（MRAM）市場規模 - アジア太平洋の磁気抵抗メモリ（MRAM）市場規模 - ヨーロッパの磁気抵抗メモリ（MRAM）市場規模 - 中南米の磁気抵抗メモリ（MRAM）市場規模 - 中東/アフリカの磁気抵抗メモリ（MRAM）市場規模 ・SWOT分析 ・バリューチェーン分析 ・ファイブフォース分析 ・価格分析 ・競争状況 ・主要企業情報 |
The global magneto resistive RAM (MRAM) market size reached US$ 427.1 Million in 2022. Looking forward, IMARC Group expects the market to reach US$ 4,525 Million by 2028, exhibiting a growth rate (CAGR) of 44.5% during 2023-2028.
Magneto resistive random access memory (MRAM), or magnetic RAM, is a non-volatile memory that uses magnetic charges to store information. Spin-transfer torque and toggle MRAM are some of the commonly available variants. They utilize magnetic tunnel junction (MTJ) that comprises two magnetic layers separated through a dielectric or insulation layer. It is a high-density RAM and it includes a capacitor and a transistor. In comparison to the traditionally used dynamic random-access memory (DRAM), MRAM can retain the information stored in the memory without a power source, is more cost-effective and does not require a large energy-consuming pulse. As a result, it is widely used in robotics, automobiles, consumer electronics and enterprise storage systems.
Magneto Resistive RAM (MRAM) Market Trends:
Significant growth in the consumer electronics industry is one of the key factors creating a positive outlook for the market. MRAM is widely used in various electronic gadgets, such as workstations, smart wearables, smartphones and digital cameras. Additionally, the increasing product demand in the aerospace and defense industries for high-temperature data storage is favoring the market growth. Moreover, various product innovations, such as the development of low-power MRAM variants for radiation-hardened microchips, are providing thrust to the market growth. They are power-efficient, resistant to radiations and can operate under temperature fluctuations. In line with this, the increasing demand for Internet of Things (IoT)-enabled devices and the widespread utilization of advanced sensors and smart robots are positively impacting the market growth. Other factors, including the increasing product utilization in miniaturized and customized integrated circuits (ICs), along with the widespread adoption of MRAM-embedded medical sensors for non-invasive diagnostic testing of medical various disorder, are anticipated to drive the market toward growth.
Key Market Segmentation:
IMARC Group provides an analysis of the key trends in each sub-segment of the global magneto resistive RAM (MRAM) market report, along with forecasts at the global, regional and country level from 2023-2028. Our report has categorized the market based on type, offering and application.
Breakup by Type:
Toggle MRAM
Spin-Transfer Torque MRAM (STT-MRAM)
Breakup by Offering:
Stand-alone
Embedded
Breakup by Application:
Consumer Electronics
Robotics
Enterprise Storage
Automotive
Aerospace and Defense
Others
Breakup by Region:
North America
United States
Canada
Asia-Pacific
China
Japan
India
South Korea
Australia
Indonesia
Others
Europe
Germany
France
United Kingdom
Italy
Spain
Russia
Others
Latin America
Brazil
Mexico
Others
Middle East and Africa
Competitive Landscape:
The competitive landscape of the industry has also been examined along with the profiles of the key players being Avalanche Technology Inc., Crocus Nano Electronics LLC, Everspin Technologies Inc., Honeywell International Inc., Infineon Technologies AG, Intel Corporation, NVE Corporation, Qualcomm Incorporated, Samsung Electronics Co. Ltd., Spin Memory Inc., Toshiba Corporation and Tower Semiconductor Ltd.
Key Questions Answered in This Report
1. What was the size of the global magneto resistive RAM (MRAM) market in 2022?
2. What is the expected growth rate of the global magneto resistive RAM (MRAM) market during 2023-2028?
3. What are the key factors driving the global magneto resistive RAM (MRAM) market?
4. What has been the impact of COVID-19 on the global magneto resistive RAM (MRAM) market?
5. What is the breakup of the global magneto resistive RAM (MRAM) market based on the type?
6. What is the breakup of the global magneto resistive RAM (MRAM) market based on the offering?
7. What is the breakup of the global magneto resistive RAM (MRAM) market based on the application?
8. What are the key regions in the global magneto resistive RAM (MRAM) market?
9. Who are the key players/companies in the global magneto resistive RAM (MRAM) market?
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